Plasma processing apparatus and plasma processing method

ABSTRACT

Provided is a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. Openings of the upstream-side expansion valves and openings of the downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

BACKGROUND OF THE INVENTION

The present invention relates to a plasma processing apparatus and aprocessing method for performing processing such as etching using plasmaformed in a processing chamber inside a vacuum container by mounting asample, which is a substrate such as a semiconductor wafer, on an uppersurface of a sample stage arranged in the processing chamber, andrelates to a plasma processing apparatus and a plasma processing methodfor performing the processing while making a refrigerant flow throughrefrigerant channels inside the sample stage included in a refrigerationcycle to adjust a temperature of the sample stage.

Conventionally, in semiconductor device manufacturing processes, plasmaprocessing is performed on a sample such as a semiconductor wafer bymeans of a plasma etching apparatus or a plasma CVD apparatus. In thesetypes of plasma processing, the temperature of the sample largelyaffects the result of the processing. More specifically, in plasmaetching, the temperature of the sample affects the resulting dimensionsand/or shape of a pattern formed at a surface of the sample by etching,and in plasma CVD processing, the temperature of the sample affects thequality and/or film formation rate of a film formed on a surface of thesample. Therefore, in these types of plasma processing, in order toenhance the quality of processing performed on a surface of the samplesubstrate, it is very important to manage the temperature of the sample.

In these types of plasma processing, in order to control the temperatureof a sample, techniques in which the temperature inside a sample stagethat holds a sample and the temperature of a sample holding surface areadjusted by means of a temperature adjustment unit arranged inside thesample stage have been employed. For example, an apparatus system inwhich refrigerant channels are formed inside a sample stage and a liquidrefrigerant is made to flow in the channels to adjust the temperature ofthe sample stage by means of heat transfer, whereby the sample isadjusted to a desired temperature, is used. In such case, a refrigeranttemperature adjustment section (for example, a chiller unit) isconnected to the sample stage via pipings, a refrigerant adjusted to apredetermined temperature by a cooling apparatus or a heating apparatusinside the refrigerant temperature adjustment section is supplied intothe channels inside the sample stage, and absorbs heat input from plasmaand then is returned to the refrigerant temperature adjustment section.

Such refrigerant temperature adjustment section is configured so as totemporarily store the liquid refrigerant in a refrigerant storage tankand adjust the temperature of the refrigerant and then supplies therefrigerant to the sample stage. In this configuration, since a largequantity of refrigerant is used for temperature adjustment, the heatcapacity of the refrigerant is large, and thus, the configuration isadvantageous in maintaining the temperature of the sample constant evenif the amount of heat input to the sample and the sample stage ischanged. However, an attempt to largely and promptly change thetemperatures of the sample and the sample stage in an active mannercauses the problem of difficulty in prompt temperature change because ofthe large heat capacity of the refrigerant. Furthermore, heat exchangebetween the liquid refrigerant and the channels is performed only bymeans of heat transfer and thus, a small quantity of heat transfer isalso one of causes that hinder prompt change in temperature of thesample stage and the sample.

Meanwhile, along with an increase in diameter of semiconductor wafers,which are samples, in the aforementioned plasma processing insemiconductor device manufacturing, power applied to the samples duringthe processing has been increasing, and as a result, the amount of heatinput to the sample and the sample stage has become larger than ever.Therefore, there is a demand for a technique that stably adjusts thetemperature of a semiconductor substrate at high speed and with highaccuracy even upon input of a large amount of heat. Furthermore, becauseof the growing complexity of semiconductor device structures as well asprovision of multiple layers on semiconductor substrate surface, it isdesired to promptly and properly adjust the temperature of a sampleaccording to each of processing steps that process respective films.

For responding to the above issues, direct expansion-type refrigeranttemperature adjustment techniques have been proposed. In theexpansion-type refrigerant temperature adjustment techniques, a path inwhich a refrigerant for adjusting a temperature of a sample stage iscirculated is configured as a heat cycle including a compressor, acondenser, an expansion valve and an evaporator, and the refrigerant isbrought to boiling and evaporated in refrigerant channels in the samplestage, whereby the sample stage acts as an evaporator in the heat cycle.As an example of such techniques, that disclosed in JP-A-2008-34409(corresponding to U.S. Pat. No. 7,838,792) is known.

SUMMARY OF THE INVENTION

In a configuration of the heat cycle described in JP-A-2008-34409, forexample, hydrochlorofluorocarbon R410a is used as a refrigerant and isintroduced into refrigerant channels inside a sample stage to useevaporative latent heat of the refrigerant in a gas-liquid two-phaseflow state for heat exchange between the refrigerant and walls of thechannels, in order to respond to a large amount of heat input to asample and the sample stage. Furthermore, adjusting an opening of anexpansion valve to quickly adjust a pressure of the refrigerant in thechannels, enabling a temperature of the refrigerant to be quicklychanged, and as a result, the temperatures of the sample stage and thesample can quickly be changed.

Furthermore, JP-A-2008-34409 discloses a configuration in whichrefrigerant channels are concentrically arranged on the inner and outersides of an inner portion of the sample stage and the refrigerant ismade to flow in the respective channels, achieving temperaturedistribution in a radial direction of the sample stage. In other words,a flow valve is provided on the upstream side of each channel andopenings of the valves are adjusted, enabling pressures of therefrigerant in the respective routes to be independently controlled, andas a result, the refrigerant temperatures in the respective routes canbe controlled. Consequently, the temperature distributions in the samplestage and the sample can be controlled.

Also, where a refrigerant flowing in refrigerant channels inside asample stage is in a gas-liquid two-phase flow state, even if therefrigerant absorbs heat input from plasma, the temperature of therefrigerant does not increase beyond a boiling point thereof, and thus,the refrigerant temperature during the refrigerant circulating in therefrigerant channels is maintained constant.

Therefore, a temperature distribution in a circumferential direction ofa circular sample stage becomes closer to a uniform distribution, and asa result, a temperature distribution in a circumferential direction of asemiconductor wafer, which is a body to be processed, can be made to becloser to a uniform distribution.

However, the aforementioned related technique has problems because ofinsufficiency in consideration of the following points. In other words,JP-A-2008-34409 has the problem that a refrigerant merging point isprovided downstream of an outlet of each channel, making it possible toprovide a large pressure difference between the respective channels,resulting in difficulty in providing a large difference in condition,for example, temperature or evaporation temperature, of a refrigerantbetween the respective channels. Therefore, it has been difficult toefficiently provide a distribution with a large temperature differencein a surface of a sample in a short period of time.

Still furthermore, in ordinary plasma processing, a refrigerantintroduced into a sample stage is set to a predetermined temperature oran evaporation temperature, and adjustment is made so that the samplestage and a sample have desired temperatures suitable for theprocessing. However, JP-A-2008-34409 mentioned above discloses nospecific method for adjusting a refrigerant to a target temperature.

Furthermore, employment of independent refrigerant temperatureadjustment units, for example, refrigeration cycles, are connected torespective channels inside a sample stage requires a number ofrefrigeration cycles, the number being equal to the number of paths,resulting in an increase in size and cost of the semiconductormanufacturing apparatus.

The present invention is intended to provide a plasma processingapparatus and a plasma processing method that efficiently achieve atemperature or a temperature distribution in a sample stage on which asample is mounted in a plasma processing apparatus in which refrigerantchannels in the sample stage are connected to a refrigeration cycle as apart thereof to adjust the temperature of the sample stage.

In order to provide such a plasma processing apparatus, the plasmaprocessing apparatus is configured to include a processing chamber thatis arranged in a vacuum container and allows plasma to be formedtherein, a sample stage on which a sample, which is an object to beprocessed by the plasma, is mounted, the sample stage including aplurality of refrigerant channels that are concentrically arranged andallow a refrigerant to flow inside and functioning as a firstevaporator, a refrigerant inlet and a refrigerant outlet arranged ineach of the plurality of refrigerant channels, and an exhaust unit thatexhausts an inside of the processing chamber for pressure reduction, theapparatus including:

a plurality of upstream-side expansion valves and a plurality ofdownstream-side expansion valves that are connected to the respectiverefrigerant inlets and the respective refrigerant outlets and adjust aflow rate or a pressure of a refrigerant flowing into the respectiverefrigerant inlets and a flow rate or a pressure of a refrigerantflowing out from the respective refrigerant outlets; and a refrigerationcycle including a compressor, a condenser, the plurality ofupstream-side expansion valves, the plurality of refrigerant channels,the plurality of downstream-side expansion valves and a secondevaporator connected in this order via a refrigerant duct, and allowingthe refrigerant to flow in the order, wherein openings of the pluralityof upstream-side expansion valves and openings of the plurality ofdownstream-side expansion valves are adjusted so that no change in flowrate of the refrigerant occurs in a plurality of refrigerant pathsbetween the plurality of upstream-side expansion valves and theplurality of downstream-side expansion valves via the plurality ofrefrigerant channels.

In order to provide such a plasma processing method, the plasmaprocessing method for processing a sample that is an object to beprocessed by plasma, by mounting the sample on an upper surface of asample stage arranged in a processing chamber inside a vacuum containerand forming the plasma in the processing chamber,

the sample stage including a refrigerant inlet and a refrigerant outletarranged in each of a plurality of refrigerant channels that areconcentrically arranged inside the sample stage and allow a refrigerantto flow inside, and functioning as a first evaporator,

the sample stage is included in a refrigeration cycle including aplurality of upstream-side expansion valves and a plurality ofdownstream-side expansion valves connected to the respective refrigerantinlets and the respective refrigerant outlets to adjust a flow rate or apressure of a refrigerant flowing into the respective refrigerant inletsand a flow rate or a pressure of a refrigerant flowing out from therespective refrigerant outlets, in which a compressor, a condenser, theplurality of upstream-side expansion valves, the plurality ofrefrigerant channels, the plurality of downstream-side expansion valvesand a second evaporator are connected in this order via a refrigerantduct to allow the refrigerant to flow therethrough in the order, themethod including the step of

adjusting openings of the plurality of upstream-side expansion valvesand openings of the plurality of downstream-side expansion valves sothat no change in flow rate of the refrigerant occurs in a plurality ofrefrigerant paths between the plurality of upstream-side expansionvalves and the plurality of downstream-side expansion valves via theplurality of refrigerant channels.

According to the present invention, dry-out of a temperature-adjustedfluid to be introduced into a sample stage can be prevented and atemperature of the temperature-adjusted fluid can efficiently becontrolled.

Other objects, features and advantages of the invention will becomeapparent from the following description of the embodiments of theinvention taken in conjunction with the accompanying drawings.

BRIEF EXPLANATION OF DRAWINGS

FIG. 1 is a vertical cross-sectional diagram illustrating an overview ofa configuration of a plasma processing apparatus according to anembodiment of the present invention;

FIG. 2 is a cross-sectional diagram schematically illustrating aconfiguration of a sample stage in the embodiment illustrated in FIG. 1;

FIG. 3 is a diagram schematically illustrating a configuration thatperforms temperature control of the sample stage in the embodimentillustrated in FIG. 1;

FIG. 4 is a flowchart illustrating the flow of operation for controllingtemperatures of the sample stage in the embodiment illustrated in FIG.1;

FIG. 5 includes time charts of openings of expansion valves andrefrigerant temperatures when the plasma processing apparatus accordingthe embodiment illustrated in FIG. 1 performs the operation illustratedin FIG. 4;

FIG. 6 is a diagram indicating a flowchart of operation for adjustingopenings of the expansion valves according to the embodiment illustratedin FIG. 1;

FIG. 7 includes time charts indicating change in openings of expansionvalves and change in refrigerant temperatures according to a variationof the embodiment illustrated in FIG. 1; and

FIG. 8 is a vertical cross-sectional diagram schematically illustratinga configuration of a refrigerant temperature adjustment sectionaccording to another variation of the embodiment illustrated in FIG. 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

An embodiment of the present invention will be described below withreference to the drawings.

JP-A-2008-34409 described above discloses a technique in which twochannels are concentrically arranged on the inner side and the outerside of a sample stage connected to a refrigeration cycle as refrigerantchannels inside the sample stage, and a refrigerant is made to flow ineach of the channels after passage through a compressor and a condenserincluded in one refrigeration cycle to form a temperature distributionin the sample stage. In this technique, a flow valve is provided on theupstream side of each of the channels, enabling pressures ofrefrigerants in the respective channels to be independently controlledby adjusting openings of the flow valves, and as a result, temperaturedistributions of the sample stage and a sample can be controlled byadjusting temperatures of the respective refrigerants. However, becausea refrigerant merging point exists downstream of outlets of therespective channels, a difference in pressure between the respectiveroutes cannot be expanded, resulting in difficulty in increasing adifference in temperature between the refrigerants in the respectivechannels. Therefore, there is the problem of difficulty in responding toa case where it is desired to expand a temperature difference within aplane of a sample.

Still furthermore, in normal plasma processing, a refrigerant introducedto a sample stage is set to a certain target temperature and the samplestage and a sample are adjusted to respective desired temperatures toperform the processing. However, JP-A-2008-34409 discloses no specificmethod for adjusting a refrigerant to a target temperature.

Still furthermore, pipings bifurcated from the refrigerant path in therefrigeration cycle are arranged in parallel and connected to respectiveinlets of the two refrigerant channels, and two pipings arranged inparallel are connected to outlets of the channels, a valve is providedon each of the pipings, and the two pipings are merged on the downstreamside and connected to the compressor. In this configuration, forexample, if an opening of the valve connected to the outer-side channelis increased to change a temperature of a refrigerant on the outer sidewith an opening of the valve connected to the inner-side channelunchanged in order to maintain a temperature of a refrigerant in theinner-side refrigerant channel, a flow rate of the refrigerant flowingto the outer-side channel is increased while a flow rate of therefrigerant flowing into the inner-side channel is decreased.

As a result, despite of the opening of the valve for the inner-sidechannel being unchanged, the temperature of the refrigerant in theinner-side channel is decreased. In other words, the problem thatadjustment of an opening of a valve for one channel affects atemperature of a refrigerant in the other channel occurs. In suchsituation, what is called hunting occurs, e.g., change in thetemperature of the refrigerant in the inner-side channel resulting inchange in the temperature of the refrigerant in the outer-side channel,or conversely, correction of the temperature on the outer periphery sideresulting in change in the temperature on the inner side, causing theproblem of difficulty in adjustment of the temperature of therefrigerant and thus adjustment of the temperatures and temperaturedistributions of the sample stage and the sample.

Furthermore, for example, if the opening of the valve for one channel ismade to be extremely small, the flow rate of a refrigerant in thechannel becoming extremely small, increasing the risk of occurrence ofwhat is called dry-out, i.e., the refrigerant including one in a liquidstate being completely evaporated while the refrigerant flows in thechannel. If dry-out of a refrigerant occurs in a channel, thetemperature of the refrigerant in the channel sharply rises, atemperature distribution in the sample stage in a direction in which therefrigerant flows in the channel in the sample stage substantiallychanges, resulting in the problem of a temperature distribution in acircumferential direction of the sample such as a semiconductor waferdeparting from a desired distribution.

As a solution to these problems, employment of a technique of connectingindependent refrigerant temperature adjustment units such asrefrigeration cycles to the respective channels requires a number ofrefrigerant temperature adjustment units, the number being equal to thenumber of channels, resulting in an increase in size and cost of thesemiconductor manufacturing apparatus, which cannot be considered as aneffective solution.

The present embodiment is intended to solve the aforementioned problems,and provide a plasma processing apparatus employing a directexpansion-type temperature adjustment unit for adjustment of atemperature distribution in a sample and efficiently enabling adjustmentof temperatures of refrigerants flowing and circulating in a pluralityof refrigerant channels in a sample stage and thus achievement oftemperatures and temperature distributions of the sample stage and thesample.

Embodiment

An embodiment of the present invention will be described below withreference to FIGS. 1 to 6. FIG. 1 is a vertical cross-sectional diagramschematically illustrating an overview of a configuration of a plasmaprocessing apparatus according to an embodiment of the presentinvention.

In the Figure, in the plasma processing apparatus, an electric field andmagnetic field forming unit for forming plasma is arranged above acylindrical vacuum container 1 and an exhaust unit that exhausts aninside of the vacuum container 1 is connected to a lower portion of thecylindrical vacuum container 1. A processing chamber 3, which is a spacearranged inside the vacuum container 1, is a space whose pressure isreduced and in which a sample 5 to be processed, which is in the form ofa substrate such as a semiconductor wafer, is arranged and processed.

At an upper portion of the vacuum container 1, a lid 2, which is acircular plate of a dielectric material such as quartz and provides alid positioned above the processing chamber 3 and defining the inside ofthe vacuum container 1 and the processing chamber 3 in an air-tightmanner, is arranged. At a lower portion of the processing chamber 3, acylindrical sample stage 4 is arranged, and the sample 5 is held andtransferred by an arm of a non-illustrated transfer robot arm to/from anupper surface of the sample stage 4, which is a mounting surface havinga circular shape so as to conform to a shape of the sample 5, in theprocessing chamber 3.

A gas introduction tube 6 is connected to an upper portion of theprocessing chamber 3, and a process gas 7 that flows in the gasintroduction tube 6 is introduced to the processing chamber 3 forperforming etching via at least one (desirably a plurality of)introduction port(s) connected to the gas introduction tube 6. At alower portion of the processing chamber 3 below the sample stage 4, anexhaust port 8 is arranged, and the process gas 7 introduced into theprocessing chamber 3 and/or a reaction product generated as a result ofetching pass through the exhaust port 8 and are discharged to theoutside of the processing chamber 3. The exhaust port 8 is connected toa vacuum pump such as a turbo-molecular pump 12 with a pressureadjustment valve 9 interposed therebetween, and an opening of thepressure adjustment valve 9 is adjusted, whereby an exhaust gas flowrate of the vacuum pump is adjusted and the pressure of the processingchamber 3 is adjusted to a pressure with a predetermined degree ofvacuum (no more than 4 Pa in the present embodiment) according to abalance between the flow rate of the vacuum pump and a flow rate of theintroduced process gas 7.

Above the processing chamber 3, an electric field or magnetic fieldgeneration device is arranged. In the present embodiment, for anelectric field, microwave 10 emitted from a microwave emitter 14 such asa magnetron is used. Microwave 10 generated by the microwave emitter 14arranged at an end portion of the waveguide 16 propagates horizontallyand then downward in a vertical direction in the waveguide 16 and formsan electric field in a predetermined mode in a resonance section, whichis a cylindrical space with the lid 2 at the upper portion of theprocessing chamber 3 as a bottom surface thereof, and the electric fieldpenetrates the lid 2 and is introduced into the processing chamber 3from above.

Furthermore, above the lid 2 and in an outer periphery of sidewalls of acylindrical portion that forms the processing chamber 3 of the vacuumcontainer 1, solenoidal coils 18 for forming a magnetic field uponsupply of direct power are arranged. Magnetic fields generated by thesolenoidal coils 18 are introduced into the processing chamber 3, andinteract with the microwave 10 introduced into the processing chamber 3,thereby making atoms and molecules of the process gas 7 form plasma 11in the processing chamber 3.

Using the plasma 11, etching is performed on a film structure that isformed on an upper surface of the sample 5 in advance and includes aplurality of film layers. The film structure in the present embodimentincludes a mask layer of, e.g., a resin photoresist at an upper portionthereof and at least one gate, metal or insulating film layer, which isan object to be processed, arranged below the photoresist.

Also, in the present embodiment, in order to adjust a temperature of thesample 5 so as to fall within a range of values suitable for theprocessing, channels for a refrigerant, which is a medium for heatexchange, are arranged inside the sample stage 4. Inside eachrefrigerant channel 20, hydrochlorofluorocarbon R410a circulates as arefrigerant in such a manner that the refrigerant enters from an inletof the refrigerant channel 20, is evaporated as a result of heatexchange with a member of the sample stage 4 inside the refrigerantchannel 20 in the sample stage 4 and flows from an outlet of therefrigerant channel 20 to the outside of the sample stage 4, and then,as described later, flows through a refrigeration cycle in which therefrigerant condenses and devolatilized again and flows into the samplestage 4 via the inlet of the refrigerant channel 20 again.

A configuration of the refrigerant channels will be described in moredetail below with reference to FIG. 2. FIG. 2 is a cross-sectionaldiagram schematically illustrating a configuration of the sample stagein the embodiment illustrated in FIG. 1.

As illustrated in the Figure, the refrigerant channels 20 includemultiple channels that are concentrically arranged and overlap in aradial direction inside the sample stage 4 having a cylindrical shape ora circular plate shape in transverse cross section, and each includes aninlet and an outlet for a refrigerant. More specifically, therefrigerant channels 20 include a plurality of concentric channelsincluding a center-side refrigerant channel 20-1 and an outerperiphery-side refrigerant channel 20-2 on the center side and the outerperiphery side of the sample stage 4 and the sample 5.

These two channels each include an inlet and an outlet for arefrigerant, and refrigerants in different conditions are supplied to,and circulate in, the channels. For example, if a temperature at which arefrigerant circulating in the center-side refrigerant channel 20-1evaporates is made to higher than an evaporation temperature of therefrigerant circulating in the outer periphery-side refrigerant channel20-2, a temperature distribution in a surface of the sample stage 4 andin the radial direction of the sample 5 exhibit high temperatures at thecenter-side portion, and if the temperature values are plotted on agraph, the graph exhibits a convex distribution in which exhibits highvalues in a center part and low values in outer peripheral parts.Conversely, if the evaporation temperature of the refrigerantcirculating in the center-side refrigerant channel 20-1 is made to belower than the evaporation temperature of the refrigerant circulating inthe outer periphery-side refrigerant channel 20-2, a temperaturedistribution in the surface of the sample stage 4 and in the radialdirection of the sample 5 exhibit a concave distribution.

As illustrated in FIG. 1, the refrigerant channels 20 in the samplestage 4 form a part of the refrigeration cycle, the part being connectedto components such as a compressor 22 and expansion valves 24-1, 24-2,24-3 and 24-4 arranged outside the sample stage 4 via refrigerant ductsin which a refrigerant flows. In such configuration, a refrigerant drawslatent heat as a result of evaporation by means of heat exchange in therefrigerant channels 20 in the sample stage 4, condenses outside thesample stage 4, releases the latent heat, and devolatilizes again.

The center-side refrigerant channel 20-1 includes a center-siderefrigerant inlet 30-1 and a center-side refrigerant outlet 32-1 inside,and a refrigerant is introduced into the center-side refrigerant channel20-1 from the center-side refrigerant inlet 30-1 via expansion valve24-1. In the present embodiment, the refrigerant introduced into thecenter-side refrigerant inlet 30-1 is split into two sides, i.e., inclockwise and counterclockwise directions, along a circumference of therefrigerant channel arranged in the form of a circular arc, and thesplit refrigerants flow through the center-side refrigerant channel 20-1and merge at the outer periphery-side refrigerant outlet 32-1 arrangedin an outer periphery-side part of the center-side refrigerant channel20-1 in which the center-side refrigerant inlet 30-1 is arranged, andthe merged refrigerant flows out from the center-side refrigerantchannel 20-1 and flows toward the compressor 22 via the expansion valve24-3.

Likewise, the refrigerant is introduced into the outer periphery-siderefrigerant channel 20-2 through an outer periphery-side refrigerantinlet 30-2 via the expansion valve 24-2, and is split into two sides andthe split refrigerants flow through the outer periphery-side refrigerantchannel 20-2 and merge at an outer periphery-side refrigerant outlet32-2 arranged in a center-side part of the outer periphery-siderefrigerant channel 20-2 in which the outer periphery-side refrigerantinlet 30-2 is arranged and the merged refrigerant flows toward thecompressor 22 via the expansion valve 24-4.

In the present embodiment, a flow rate or a pressure of the refrigerantflowing out from the center-side refrigerant channel 20-1 and a flowrate or a pressure of the refrigerant flowing out from the outerperiphery-side refrigerant channel 20-2 are adjusted at the respectiveexpansion valves 24-3 and 24-4 arranged on the respective refrigerantducts connected to the center-side refrigerant outlet 32-1 and the outerperiphery-side refrigerant outlet 32-2. The expansion valves 24-3 and24-4 each include a valve for variably adjusting a cross-sectional areaof a refrigerant passage arranged inside, and the flow rate of therefrigerant is changed by increasing or decreasing the opening of thevalve. Also, in the present embodiment, each of the expansion valves24-3 and 24-4 may be one including a configuration that rapidly reducesan internal pressure in an internal passage to gasify the refrigerant toadjust the pressure of the refrigerant.

In the present embodiment, the refrigerant ducts connected to theexpansion valves 24-3 and 24-4 are connected to the compressor on therefrigerant downstream side, and thus, the pressures of the refrigerantspassing through the expansion valves 24-3 and 24-4 can also be decreasedand adjusted by means of adjustment of the flow rates made byincreasing/decreasing the openings. The refrigerants whose pressureshave been adjusted through the expansion valves 24-3 and 24-4subsequently merge in a merging section 52 in which the two refrigerantducts merge, and the merged refrigerant is introduced into a refrigeranttemperature adjustment section 21 in which a temperature of therefrigerant with latent heat absorbed is adjusted. The refrigeranttemperature adjustment section 21, which is included in therefrigeration cycle including the refrigerant channels 20 in the samplestage 4 and is a part that makes the refrigerant perform heat exchangeto release internal latent heat again to devolatilize, and includes anevaporator 26, the compressor 22 and a condenser 23, which are connectedin this order via refrigerant ducts.

The refrigerant introduced into the refrigerant temperature adjustmentsection 21 is first introduced into the evaporator 26. The evaporator 26includes a channel arranged at a position and with a configuration thatenable heat exchange with the refrigerant duct in which the introducedrefrigerant flows inside, in parallel to the refrigerant duct, thechannel allowing water 25-1, which is a heat exchange medium for heatexchange with the refrigerant, to flow inside. In the presentembodiment, the refrigerant flowing in the refrigerant duct has adecreased pressure after the passage through the expansion valves 24-3and 24-4, and the refrigerant whose temperature has thus been decreasedperform heat exchange with the water 25-1 flowing and circulating in theheat exchange medium channel in the evaporator 26 and therebyevaporates, and is gasified until a dryness or quality of substantially1 is achieved.

The sample stage 4 including the refrigerant channels 20 in the presentembodiment can also function as an evaporator, and the evaporator 26also serves as a second evaporator. Also, as described later, the samplestage 4 has a configuration that can also operate as a condenser (heaterfor a sample) by variably adjusting pressures or evaporating pressuresof the refrigerants in the refrigerant channels 20 inside the samplestage 4 by a balance among the openings of the expansion valves 24-1 to24-4 provided by operations of the expansion valves 24-1 to 24-4.

The gasified refrigerant is introduced into an inlet of the compressor22 and compressed inside the compressor 22, whereby the pressure of therefrigerant is increased. The high-pressure flowing out from an outletof the compressor 22 is introduced into the condenser 23 and condenses.In the condenser 23, as with the evaporator 26, a channel in which water25-2, which is a heat exchange medium, flows inside is arranged so as toexchange heat with the refrigerant duct, and the refrigerant introducedinto the condenser 23 performs heat exchange with the water 25-2 flowingin the heat exchange medium channel and is thereby cooled, and condensesuntil a dryness or quality of substantially 0 is achieved. Although inthe present embodiment, the water 25-1 and the water 25-2 are used asheat exchange mediums, other fluids may be used.

The refrigerant flowing out from the condenser 23 flows in therefrigerant duct toward the sample stage 4, and is split into two pathsat a bifurcation section 50 arranged on the refrigerant duct. One of thetwo paths is a path with the expansion valve 24-1 arranged thereon, thepath being connected to the center-side refrigerant channel 20-1 in thesample stage 4, and the other is a path with the expansion valve 24-2arranged thereon, the path being connected to the outer periphery-siderefrigerant channel 20-2. The expansion valves 24-1 and 24-2 haverespective configurations that are the same as those of the expansionvalves 24-3 and 24-4, the configurations variably increasing/decreasinga cross-sectional area of the passage of the refrigerant that passesinside the respective valve to adjust the flow rate of the refrigerant.Also, the valves may have a configuration that rapidly decreases apressure inside the passage to gasify the refrigerant. Furthermore,since the compressor 22 is connected to the expansion valves 24-1 and24-2 on the downstream side of the refrigeration cycle via therefrigerant ducts and the refrigerant channels 20 in the sample stage 4,only adjustment of the flow rate of the refrigerant by the expansionvalves 24-1 and 24-2 enables adjustment of the pressure on thedownstream side of the refrigerant.

Subsequently, the refrigerants flowing these paths are introduced intothe inner peripheral-side refrigerant channel 20-1 and the outerperiphery-side refrigerant channel 20-2 again, respectively, and performheat exchange with the members included in the respective refrigerantchannels in the sample stage 4 to boil and gasify and flow out from thesample stage 4, and flow toward the compressor 22 again via theexpansion valves 24-3 and 24-4 to circulate. In the present embodiment,the openings of the expansion valves 24-1 to 24-4 are adjusted by anon-illustrated control section, whereby conditions such as evaporationtemperatures of the refrigerants introduced into the center-siderefrigerant channel 20-1 and the outer periphery-side refrigerantchannel 20-2 are adjusted so as to fall within a desired value range.

For example, for the refrigerant introduced into the center-siderefrigerant channel 20-1, if the opening of the expansion valve 24-1connected to the inlet of the center-side refrigerant channel 20-1 isdecreased and/or if the opening of the expansion valve 24-3 connected tothe outlet of the center-side refrigerant channel 20-1 is increased, thepressure of the refrigerant flowing inside the center-side refrigerantchannel 20-1, which is a refrigerant channel between these valves, isdecreased, resulting in a decrease in a temperature (evaporationtemperature) at which the refrigerant evaporates inside the channelConversely, if the opening of the expansion valve 24-1 is increasedand/or if the opening of the expansion valve 24-3 is decreased, thepressure of the refrigerant circulating in the center-side refrigerantchannel 20-1 is increased, resulting in an increase in evaporationtemperature of the refrigerant.

Likewise, for the refrigerant introduced into the outer periphery-siderefrigerant channel 20-2, if the opening of the expansion valve 24-2 isdecreased and/or the opening of the expansion valve 24-4 is increased,the pressure of the refrigerant is decreased, resulting in a decrease intemperature of the refrigerant circulating in the outer periphery-siderefrigerant channel 20-2. Conversely if the opening of the expansionvalve 24-2 is increased and/or the opening of the expansion valve 24-4is decreased, the pressure of the refrigerant is increased, resulting inan increase in temperature of the refrigerant circulating in the outerperiphery-side refrigerant channel 20-2. The temperatures and theevaporation temperatures of the refrigerants flowing in the innerperipheral-side refrigerant channel 20-1 and the outer periphery-siderefrigerant channel 20-2 are variably adjusted by increasing/decreasingthe openings of the respective expansion valves 24-1 to 24-4, and thechannels perform an operation as either of an evaporator (cooler for asample) and a condenser (heater for a sample), which are switchable fromeach other.

In these cases, the temperatures of the refrigerants introduced into thecenter-side refrigerant channel 20-1 and the outer periphery-siderefrigerant channel 20-2 are detected by a thermometer 40-1 and athermometer 40-2, respectively, arranged on the respective refrigerantducts downstream of the expansion valve 24-1 and the expansion valve24-2 arranged on the refrigerant ducts connected to the respectiveinlets, between the respective valves and the center-side refrigerantinlet 30-1 and the outer periphery-side refrigerant inlet 30-2.Hereinafter, the temperatures of the refrigerants detected by thethermometer 40-1 and the thermometer 40-2 are referred to as T1 and T2,respectively.

In the present embodiment, the temperatures or evaporation temperaturesof the refrigerants in the plurality of refrigerant channels, i.e., thecenter-side refrigerant channel 20-1 and the outer periphery-siderefrigerant channel 20-2, which are branched and supplied from therefrigerant temperature adjustment section 21 including one directexpansion-type heat cycle, are made to fall within respective properranges by variable adjusting the openings of the expansion valves 24-1to 24-4. In the present specification, one direct expansion-type heatcycle means a direct expansion-type heat cycle including one compressor.

A configuration for control of the openings of the expansion valves 24-1to 24-4 will be described with reference to FIG. 3. FIG. 3 is a diagramschematically illustrating a configuration that performs temperaturecontrol of the sample stage in the embodiment illustrated in FIG. 1. Inthe Figure, flows of signals are indicated by dashed lines.

Respective signals indicating results of detection by the thermometer40-1 and the thermometer 40-2 are transmitted via any of wire andwireless communications to an analysis section 35. The analysis section35 detects respective refrigerant temperatures T1 and T2 based on therespective signals, and detects temperature values suitable forprocessing the sample 5 and necessary temperatures or evaporationtemperatures of the refrigerants according to a distribution in theradial direction of the temperature values, and calculates properopenings of the expansion valves 24-1 to 24-4 according to thetemperatures and the actual refrigerant temperatures T1 and T2 detectedfrom the signals. Signals of the results of calculation are transmittedto a control section 37 via communications, and the control section 37transmits instruction signals for achieving the calculated openings ofthe expansion valves 24-1 to 24-4 to the expansion valves 24-1 to 24-4or drive devices therefor to adjust the openings of the expansionvalves.

Although in the present embodiment, the analysis section 35 and thecontrol section 37 are described as different members, the analysissection 35 and the control section 37 may be included in one integratedcircuit, and thus may be included in a configuration in which aplurality of circuits arranged on one substrate can communicate witheach other via wire or wireless communication circuits. Also, theanalysis section 35 is a circuit that includes a memory, a computer anda communication interface inside, and the computer including, e.g., amicroprocessor or a microcomputer reads an algorithm recorded in advanceas software in a memory such as DRAM or ROM as the memory or in anexternal storage apparatus such as a hard disk drive or a CD-ROM drive,and based on the algorithm, calculates the temperatures or the openings,or the instruction signals, using signals received via the communicationinterface. The computer, the memory and the communication interface maybe ones that have both functions of the analysis section 35 and thecontrol section 37.

Next, a configuration in which the refrigerant temperatures of thecenter-side refrigerant channel 20-1 and the outer periphery-siderefrigerant channel 20-2 are adjusted by control of the openings of theexpansion valves 24-1 to 24-4 in the present embodiment will bedescribed in more detail.

In the present embodiment, control of the temperatures of the respectiverefrigerants introduced to the center-side refrigerant channel 20-1 andthe outer periphery-side refrigerant channel 20-2 is performed byadjusting the openings of the expansion valves 24-1 to 24-4. In otherwords, the openings of the expansion valves 24-1 to 24-4 are adjusted sothat a conductance of a refrigerant path including the expansion valve24-1, the center-side refrigerant channel 20-1 and the expansion valve24-3, and the refrigerant ducts connecting them as components thereof isequal to a conductance of a refrigerant path including the expansionvalve 24-2, the outer periphery-side refrigerant channel 20-2 and theexpansion valve 24-4, and the refrigerant ducts connecting them ascomponents thereof.

For example, for the refrigerant introduced into the center-siderefrigerant channel 20-1, adjustment is made so that the opening ofexpansion valve 24-1 is decreased and the opening of the expansion valve24-3 is increased. As a result of such operation, the pressure of therefrigerant in the refrigerant path between the expansion valve 24-1 andthe expansion valve 24-3 decreases, resulting in a decrease intemperature or evaporation temperature of the refrigerant flowing in thecenter-side refrigerant channel 20-1. Conversely, adjustment is made sothat the opening of the expansion valve 24-1 is increased and theopening of the expansion valve 24-3 is decreased. As a result of suchoperation, the pressure of the refrigerant flowing in the center-siderefrigerant channel 20-1 increases, whereby the temperature or theevaporation temperature of the refrigerant is increased.

Likewise, for the refrigerant flowing in the outer periphery-siderefrigerant channel 20-2, the opening of the expansion valve 24-2 isdecreased and the opening of the expansion valve 24-4 is increased.Consequently, the pressure of the refrigerant decreases, resulting in adecrease in temperature or evaporation temperature of the refrigerantflowing in the outer periphery-side refrigerant channel 20-2.Conversely, the opening of the expansion valve 24-2 is increased and theopening of the expansion valve 24-4 is decreased. Consequently, thepressure of the refrigerant increases, and as a result, the temperatureor the evaporation temperature of the refrigerant flowing in the outerperiphery-side refrigerant channel 20-2 increases.

For performing the above-described operations of the expansion valves24-1 and 24-3 and the expansion valves 24-2 and 24-4, the openings ofthe expansion valves are adjusted according to instructions from theanalysis section 35 or the control section 37 so that the conductancesof the refrigerant paths including the refrigerant channels 20 in thesample stage 4 between the respective valves are equal to each other. Inother words, in the present embodiment, where the conductances of theexpansion valves 24-1 to 24-4 are C1 to C4, respectively, the openingsof the expansion valves are adjusted so as to satisfy expression 1below.

1/C1+1/C3=1/C2+1/C4   (1)

Consequently, the refrigerant conductance of the refrigerant pathbetween the expansion valve 24-1 and the expansion valve 24-3 via thecenter-side refrigerant channel 20-1 and the conductance of therefrigerant path between the expansion valve 24-2 and the expansionvalve 24-4 via the outer periphery-side refrigerant channel 20-2 aremade to have values that are equal to each other or values that areapproximate to each other enough to regard the values as beingsubstantially equal to each other, and even under different processingconditions, the conductances are maintained equal to each other, wherebythe flow rates of the respective refrigerants flowing in these paths aresubstantially equal to each other. Therefore, even when the openings ofthe expansion valves in one of the paths are changed in order to adjustthe temperature of the refrigerant, the flow rate of the refrigerant inthe other path is not affected by that change and can be maintainedconstant, and thus, the temperature of the refrigerant can be maintainedconstant if the openings of the expansion valves are not changed.

To be precise, the conductance of the center-side refrigerant channel20-1 is included in the path between the expansion valve 24-1 and theexpansion valve 24-3, and the conductance of the outer periphery-siderefrigerant channel 20-2 is included in the path between the expansionvalve 24-2 and the expansion valve 24-4; however, the present inventorshave confirmed that since the conductances of the channels are largecompared to the conductances of the expansion valves 24-1 to 24-4,adjustment of the openings of the expansion valves 24-1 to 24-4 thatsatisfies the expression 1 causes no failure.

Also, in the present embodiment, the expansion valves 24-1 to 24-4 havea same configuration, and same performance can be delivered even if anyone of the expansion valves is replaced with another. More specifically,for these expansion valves 24-1 and 24-4, same units and same parts areemployed, and even if an operation of any one of the expansion valves isperformed by any other one of the expansion valves, same results ofrefrigerant flow rates or pressures are obtained. For adjustment of theopenings of the expansion valves 24-1 to 24-4, the openings in a rangein which conductances of refrigerants flowing in the respectiveexpansion valves are proportional to the openings of the respectiveexpansion valves. In such case, where V1 to V4 are the openings of theexpansion valves 24-1 to 24-4, the openings of the respective expansionvalves 24-1 to 24-4 are adjusted so as to satisfy the followingexpression 2.

1/V1+1/V3=1/V2+1/V4   (2)

A flowchart for adjustment of the openings of the expansion valves 24-1to 24-4 where the above-described configuration is employed in plasmaetching using three different refrigerant temperature conditions, thatis, including three steps is illustrated in FIG. 4, and time chartsindicating change in openings of the expansion valves 24-1 and 24-4 andchange in refrigerant temperatures are illustrated in FIG. 5. FIG. 4 isa flowchart illustrating the flow of operation for adjustingtemperatures of the sample stage in the embodiment illustrated inFIG. 1. FIG. 5 is a diagram illustrating time charts of the openings ofthe expansion valves and adjusted fluid temperatures when the plasmaprocessing apparatus according to the embodiment illustrated in FIG. 1performs the operation indicated in FIG. 4.

Here, (a) in FIG. 5 is a time chart relating to refrigerant temperaturesT1 and T2, (b) in FIG. 5 is a time chart relating to the opening V1 ofthe expansion valve 24-1 and the opening V3 of the expansion valve 24-3,and (c) in FIG. 5 is a time chart relating to the opening V2 of theexpansion valve 24-2 and the opening V4 of the expansion valve 24-4.Hereinafter, an operation for adjustment of the openings of theexpansion valves 24-1 and 24-4 will be described with reference to theseFigures.

First, in step 1 (S1) of plasma etching, if set temperatures for T1 andT2 are 20° C., the respective openings of the expansion valves 24-1 to24-4 are set to 50% from the refrigerant temperatures and a rotationspeed of the compressor 22 (for example, 3000 rpm), based on database inthe control section 37.

Next, when the processing transitions from step 1 (S1) to step 2 (S2) inwhich the set values for T1 and T2 are 25° C. and 20° C., respectively,as illustrated in FIG. 5, in transition step 12 (S12) between step 1 andstep 2, it is necessary to change T1 from 20° C. to 25° C. withoutchanging T2. In such case, V1 is increased while V3 is decreased: V3 isadjusted according to the change of V1 so as to satisfy the expression2. Here, the refrigerant temperatures T1 and T2, which are measured bythe thermometer 40-1 and the thermometer 40-2, are consistentlymeasured, and adjustment of V1 and V3 is made until it is determinedthat T1 has reached the set value. Also, in transition step 12 (S12),there is no need to change T2, and thus V2 and V4 are maintained at 50%.

In transition step 12 (S12), if it is determined that T1 has reached theset value (25° C. in this case), it is determined that transition stepS12 has been completed, and step 2 (S2) starts.

Next, if after an end of step 2 (S2), the processing transitions to step3 (S3) in which the set values for T1 and T2 are 30° C. and 15° C.,respectively, in a first half of transition step 23 (S23) between thesesteps, first, T2 is changed from 20° C. to 15° C. without changing T1.In such case, V2 is decreased while V4 is increased: V4 is adjustedaccording to the change of V2 so as to satisfy the expression 2. Theadjustment of V2 and V4 are made until it is determined that T2 hasreached the set value. Also, during that time period, V1 and V3 aremaintained to make T1 constant.

In the first half of transition step 23 (S23), if it is determined thatT2 has reached the set value (15° C. in this case), next, in a secondhalf of transition step 23 (S23), adjustment for changing T1 to the setvalue (30° C. in this case) is made without changing T2. In that case,V1 is increased while V3 is decreased: V3 is adjusted according tochange of the opening V1 so as to satisfy the expression 2. Theadjustment of V1 and V3 is made until it is determined that T1 hasreached the set value. Also, during that time period, V2 and V4 aremaintained to make T2 constant.

In the second half of transition step 23 (S23), if it is determined thatT1 has reached the set value, it is determined that transition step 23(S23) has been completed, and step 3 (S3) starts, and if the step ends,the etching ends.

Although the openings of the expansion valves 24-1 and 24-4 describedabove are adjusted so as to satisfy the expression 2, while a set valuefor refrigerant temperature and T1 or T2 are compared with each other,the method for the adjustment is not limited to this method. Forexample, database is stored in advance in the control section 37,initial set values for V1 to V4 are estimated from set refrigeranttemperatures, and first, V1 to V4 are set to the estimated values, andsubsequently, fine adjustment of V1 to V4 is made so that T1 and T2reach the set values.

An excerpt of a flowchart for a case where an operation for suchadjustment is employed in transition step 12 (S12) is illustrated inFIG. 6. FIG. 6 is a diagram illustrating a flowchart of an operation foradjusting the openings of the expansion valves according to theembodiment illustrated in FIG. 1.

If the processing transition from step 1 (S1) to step 2 (S2) in which T1and T2 are 25° C. and 20° C., respectively, first, initial set valuesfor the openings V1 to V4 are estimated based on the database stored inthe control section 37, and the openings are adjusted to those values.The initial set values satisfy the expression 2 (S12-1).

Next, whether or not T1 and T2 have the set values in step 2 (S2) isdetermined. In this case, the determination is made only for T1 becauseT2 remains unchanged. If T1 is higher than the set value (25° C. in thiscase), V1 is decreased so as to decrease T1, and V3 is increased so asto satisfy the expression 2. If T1 is lower than the set value, V1 isincreased to increase T1, and V3 is decreased to satisfy the expression2. In this case, V2 and V4 are maintained because T2 remains unchanged.If it is determined as a result of such adjustment that T1 has reachedthe set value, it is determined that transition step S12 has beencompleted, and step 2 (S2) starts.

As a result of such adjustment being made, T1 and T2 can be adjusted toset values by first adjusting V1 to V4 to initial set values andsubsequently making fine adjustment of V1 to V4. Also, if the processingtransitions to step 3 (S3) after completion of step 2 (S2), T1 and T2can be adjusted to set values by adjusting V1 to V4 in transition step23 (S23) between these steps in a manner similar to the above.

As a result of the above-described adjustment of the openings of theexpansion valves 24-1 to 24-4, in a configuration in which temperaturesof refrigerants in a plurality of routes, which are introduced into thesample stage 4, are adjusted by the refrigerant temperature adjustmentsection 21 including one direct expansion-type heat cycle, even if thetemperature of the refrigerant in one route is changed, an effect ofsuch change on the temperature of the refrigerant in the other route canbe made to be small. Consequently, occurrence of hunting in adjustmentof temperatures of the refrigerant in the respective refrigerantchannels is suppressed, enabling efficient adjustment of thetemperatures or the evaporation temperatures of the refrigerants. Also,even if such adjustment is made, the temperatures of the refrigerantsare adjusted while the refrigerant flow rates in both routes are made tobe equal to each other, decreasing the risk of dry-out, which easilyoccurs when a refrigerant flow rate is extremely reduced. Consequently,a distribution of temperatures in a circumferential direction of thesample stage 4 and the sample 5 is reduced.

Variation 1

In the above-described embodiment of the present invention, whentemperatures of refrigerants in a plurality of routes are adjusted, therefrigerant temperature in one route is changed while the refrigeranttemperature in the other route is maintained constant. However,enhancement in throughput of semiconductor manufacturing apparatusesdemands quick adjustment of the refrigerant temperatures, and therefore,there may be cases where temperature adjustment quicker than thetemperature adjustment method indicated in the embodiment is needed.Still furthermore, there may be cases where adjustment for quicklyincreasing or decreasing a difference between the refrigeranttemperatures in the plurality of routes is needed. A variation formeeting such needs will be described in below.

In the variation, a configuration for refrigerant temperature adjustmentin a plasma processing apparatus is similar to that indicated in theembodiment. Then, when the openings of expansion valves 24-1 to 24-4 areadjusted, openings V1 to V4 of the expansion valves 24-1 to 24-4 areadjusted so as to satisfy the following expression 3 below. In thepresent variation, the expansion valves 24-1 to 24-4 have aconfiguration that is the same as that of the embodiment.

V1=V4 and V2=V3   (3)

If the expression 3 is satisfied, both the expression 1 and theexpression 2 are satisfied. Thus, flow rates of refrigerants introducedinto a center-side refrigerant channel 20-1 and an outer periphery-siderefrigerant channel 20-2 are equal to each other, and also aremaintained equal to each other even under different processingconditions. This point is the same as the embodiment; however, if theopenings of the expansion valves 24-1 to 24-4 are adjusted so as tosatisfy the expression 3, a temperature of a refrigerant in one route isdecreased when a temperature of a refrigerant in the other route isincreased, that is, the temperatures in both routes are simultaneouslychanged in manners opposite to each other.

A flowchart indicating change in opening of the expansion valves 24-1 to24-4 and change in refrigerant temperatures when the above-describedadjustment operation is employed in plasma etching using three differentrefrigerant temperatures, that is, including three steps is illustratedin FIG. 7. FIG. 7 includes time charts indicating change in openings ofthe expansion valves and change in refrigerant temperatures according tothe variation of the embodiment illustrated in FIG. 1. Here, (a) in FIG.7 is a time chart relating to refrigerant temperatures T1 and T2, (b) inFIG. 7 is a time chart relating to the opening V1 of the expansion valve24-1 and the opening V3 of the expansion valve 24-3, and (c) in FIG. 7is a time chart relating to the opening V2 of the expansion valve 24-2and the opening V4 of the expansion valve 24-4.

In the Figure, first, in step 1 (S1) of the plasma etching, if settemperatures for T1 and T2 are both 20° C., each of the openings of theexpansion valves 24-1 to 24-4 is set to 50% from the refrigeranttemperatures and a rotation speed of a compressor 22, based on thedatabase in a control section 37.

Next, when the processing transitions from step 1 (S1) to step 2 (S2) inwhich T1 and T2 are 25° C. and 15° C., respectively, in transition step12 (S12) between these steps, V1 is increased while V3 is decreased inorder to increase T1, and as with the change in V1 and V3, V4 isincreased while V2 is decreased so as to satisfy the expression 3 inorder to decrease T2. Consequently, T1 is increased while T2 isdecreased, and T1 and T2 are adjusted to the respective set temperaturesin step 2 (S2).

In transition step 12 (S12), if it is determined that T1 and T2 havereached the respective target temperatures (25° C. and 15° C.,respectively, in this case), it is determined that transition step 12(S12) has been completed, and step 2 (S2) starts.

Next, when the processing transitions to step 3 (S3) in which the setvalues for T1 and T2 are both 20° C. after completion of step 2 (S2), intransition step 23 (S23) between these steps, V3 is increased while V1is decreased, and as with the change in V1 and V3, V4 is decreased whileV2 is increased so as to satisfy the expression 3. Consequently, T1 isdecreased while T2 is increased, whereby T1 and T2 are adjusted to therespective set temperatures in step 3 (S3). In transition step 23 (S23),if it is determined that T1 and T2 have reached target temperatures(both 20° C. in this case), it is determined that transition step 23(S23) has been completed, and step 3(S3) starts, and when the step ends,the etching ends.

As a result of the above-described adjustment of the openings of theexpansion valves 24-1 to 24-4 being made, in a configuration in whichtemperatures of refrigerants in a plurality of routes, which areintroduced into a sample stage 4, are adjusted by a refrigeranttemperature adjustment section 21 including one direct expansion-typeheat cycle, a difference between the temperatures of the refrigerants inthe plurality of routes can be expanded or reduced in a shorter periodof time. Also, even if the temperature of the refrigerant in one routeis changed, an effect of such change on the temperature of therefrigerant in the other route can be made to be small. Consequently,occurrence of hunting in adjustment of the temperatures of therefrigerants in the respective refrigerant channels is suppressed,enabling efficient adjustment of the temperatures or evaporationtemperatures of the refrigerants. Also, when such adjustment is made,also, the refrigerant temperature adjustment is made while the flowrates of the refrigerants in both routes are made to be equal to eachother, decreasing the risk of dry-out, which easily occurs when arefrigerant flow rate is extremely reduced. Consequently a distributionof temperatures in a circumferential direction of a sample stage 4 and asample 5 is reduced.

Variation 2

In the above-described embodiment and variation, the temperatures of therefrigerants introduced to the center-side refrigerant channel 20-1 andthe outer periphery-side refrigerant channel 20-2 inside the samplestage 4 are adjusted only by adjustment of the openings of the expansionvalves 24-1 to 24-4. However, in such case, a range of temperatures thatcan be provided by adjustment may be small. For example, there is theproblem that the above-described embodiment and variation cannot respondto a case where a refrigerant temperature that is lower thantemperatures provided only by adjustment of the openings of theexpansion valves 24-1 to 24-4 is needed.

Also, although in the adjustment of the expansion valves 24-1 to 24-4indicated in the variation, it is possible to quickly expand or reduce adifference between temperatures of the refrigerants in the plurality ofroutes, there are temperature conditions that cannot be met. Forexample, it is possible to adjust T1 and T2 in both routes from 20° C.in step 1 (S1) to 25° C. and 15°, respectively, as indicated in thevariation; however, it is difficult to adjust T1 and T2 to 25° C. and10° C., respectively, only by the method indicated in the variation.

Variation 2 of the embodiment of the present invention responds to theseproblems. A configuration of an apparatus according to variation 2 ofthe present invention will be described with reference to FIG. 8. FIG. 8is a vertical cross-sectional diagram schematically illustrating aconfiguration of a refrigerant temperature adjustment section accordingto another variation of the embodiment illustrated in FIG. 1. Theapparatus is one obtained by addition of a main line 44, a bypass line46 and a thermometer 40-3 between the condenser 23 and the bifurcationsection 50 in the configuration illustrated in FIG. 1. In the presentvariation, also, expansion valves 24-1 to 24-4 have a configuration thatis the same as those in the embodiment. A refrigerant condensed in thecondenser 23 is introduced to the main line 44 or the bypass line 46. Avalve 48-1 and a valve 48-2 are connected to the main line 44 and thebypass line 46, respectively, and flow rates of refrigerants flowing inthe lines are adjusted by opening/closing, or increasing/decreasingopenings of, the respective valves.

If the opening of the valve 48-1 is large and the opening of the valve48-2 is small, a majority of the refrigerant flows through the main line44. Meanwhile, if the opening of the valve 48-1 is small and the openingof the valve 48-2 is large, a majority of the refrigerant flows throughthe bypass line 46. In this case, the refrigerant flows through acapillary 42 provided downstream of the valve 48-2. The capillary 42 isformed by a narrow tube with a low conductance, and when the refrigerantflows through the capillary 42, a pressure of the refrigerant isdecreased. In other words, where a majority of the refrigerant flowsthrough the bypass line 46, the pressure of the refrigerant is decreasedcompared to a case where a majority of the refrigerant flows through themain line 44, and as a result, a temperature of the refrigerant isdecreased.

A temperature of the refrigerant that has flowed through the main line44 and the bypass line 46 is measured by the thermometer 40-3. Thetemperature (also referred to as T3) measured by the thermometer 40-3subsequently serves as a base temperature for temperatures T1 and T2 ofthe refrigerant finally determined by adjustment of the expansion valves24-1 to 24-4. The openings of the valve 48-1 and the valve 48-2 areadjusted by an analysis section 35 and a control section 37. As aresult, flow rates of the refrigerants flowing in the main line 44 andthe bypass line 46 are adjusted, and consequently, T3 is adjusted.

Where adjustment of the openings of the expansion valves 24-1 to 24-4described in the above-described embodiment is employed in theconfiguration illustrated in FIG. 8, in a configuration in whichtemperatures of refrigerants in a plurality of routes, which areintroduced into a sample stage 4, are adjusted by a refrigeranttemperature adjustment section 21 including one heat cycle, even if thetemperature of the refrigerant in one route is changed, an effect ofsuch change on the temperature of the refrigerant in the other route canbe eliminated, and a refrigerant temperature range can be widened byadjustment of the thermometer 40-3. For example, if it is desired todecrease set values for T1 and T2, it is only necessary to decrease theopening of the valve 48-1 and increase the opening of the valve 48-2.For such adjustment, the valve 48-1 and the valve 48-2 are adjusted bythe analysis section 35 and the control section 37 to adjust T3, andsubsequently, T1 and T2 are finally adjusted by the expansion valves24-1 to 24-4.

Also, when adjustment of the openings of the expansion valves 24-1 and24-4 described in variation 1 is employed in the configurationillustrated in FIG. 8 and it is desired to make set temperatures for T1and T2 be 25° C. and 10° C., respectively, such set temperatures can beprovided by decreasing the opening of the valve 48-1 and increasing theopening of the valve 48-2 to decrease T3 and making V1 and V4 be largerand making V2 and V3 be smaller compared to the conditions indicated inFIG. 7 to expand a temperature difference between T1 and T2.

As described above, even if the refrigerant temperature adjustmentmethod indicated in the above-described embodiment or variation 1, thetemperature range can be widened to the low-temperature side.

As a result of any of the embodiment and the variations described above,when a temperature adjustment section including one directexpansion-type heat cycle is employed in a plasma processing apparatusto adjust temperatures of respective refrigerants in a plurality ofroutes, occurrence of hunting and/or dry-out in refrigerant temperatureadjustment can be suppressed.

It should be further understood by those skilled in the art thatalthough the foregoing description has been made on embodiments of theinvention, the invention is not limited thereto and various changes andmodifications may be made without departing from the spirit of theinvention and the scope of the appended claims.

1. A plasma processing apparatus including a processing chamber that is arranged in a vacuum container and allows plasma to be formed therein, a sample stage on which a sample, which is an object to be processed by the plasma, is mounted, the sample stage including a plurality of refrigerant channels that are concentrically arranged and allow a refrigerant to flow inside and functioning as a first evaporator, a refrigerant inlet and a refrigerant outlet arranged in each of the plurality of refrigerant channels, and an exhaust unit that exhausts an inside of the processing chamber for pressure reduction, the apparatus comprising: a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves that are connected to the respective refrigerant inlets and the respective refrigerant outlets and adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets; and a refrigeration cycle including a compressor, a condenser, the plurality of upstream-side expansion valves, the plurality of refrigerant channels, the plurality of downstream-side expansion valves and a second evaporator connected in this order via a refrigerant duct, and allowing the refrigerant to flow in the order, wherein openings of the plurality of upstream-side expansion valves and openings of the plurality of downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant paths between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels.
 2. The plasma processing apparatus according to claim 1, wherein the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in the plurality of refrigerant paths, the flow rate being detected based on a result of detection by each of detectors that are arranged on a plurality of refrigerant ducts between the plurality of upstream-side expansion valves and the respective refrigerant inlets of the plurality of refrigerant channels and detect respective temperatures of the refrigerants flowing in the respective refrigerant ducts.
 3. The plasma processing apparatus according to claim 1, wherein the plurality of refrigerant channels include a center-side refrigerant channel arranged on a center side of the sample stage and an outer periphery-side refrigerant channel arranged on an outer periphery side of the sample stage, and the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that a sum of reciprocals of respective refrigerant conductances of the upstream-side expansion valve and the downstream-side expansion valves connected to the center-side refrigerant channel is equal to a sum of reciprocals of respective refrigerant conductances of the upstream-side expansion valve and the downstream-side expansion valve connected to the outer periphery-side refrigerant channel.
 4. The plasma processing apparatus according to claim 1, wherein the plurality of refrigerant channels include a center-side refrigerant channel arranged on a center side of the sample stage and an outer periphery-side refrigerant channel arranged on an outer periphery side of the sample stage, the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves include a common configuration, and the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that a sum of reciprocals of the openings of the upstream-side expansion valve and the downstream-side expansion valve connected to the center-side refrigerant channel is equal to a sum of reciprocals of the openings of the upstream-side expansion valve and the downstream-side expansion valve connected to the outer periphery-side refrigerant channel.
 5. The plasma processing apparatus according to claim 4, wherein the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that a sum of the opening of the downstream-side expansion valve connected to the center-side refrigerant channel and the opening of the upstream-side expansion valve connected to the outer periphery-side refrigerant channel is equal to a sum of the opening of the upstream-side expansion valve connected to the center-side refrigerant channel and the opening of the downstream-side expansion valve connected to the outer periphery-side refrigerant channel.
 6. The plasma processing apparatus according to claim 1, further comprising a main line and a bypass line that is arranged in parallel to the main line and includes a capillary with a small conductance, the main line and the bypass line allowing the refrigerant to flow therethrough, a valve that is provided on an upstream side of each of the main line and the bypass line to open/close the respective line, and a thermometer provided on a downstream side of the main line and the bypass line, between the condenser and the plurality of upstream-side expansion valves.
 7. A plasma processing method for processing a sample that is an object to be processed by plasma, by mounting the sample on an upper surface of a sample stage arranged in a processing chamber inside a vacuum container and forming the plasma in the processing chamber, the sample stage including a refrigerant inlet and a refrigerant outlet arranged in each of a plurality of refrigerant channels that are concentrically arranged inside the sample stage and allow a refrigerant to flow inside, and functioning as a first evaporator, the sample stage is included in a refrigeration cycle including a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to the respective refrigerant inlets and the respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets, in which a compressor, a condenser, the plurality of upstream-side expansion valves, the plurality of refrigerant channels, the plurality of downstream-side expansion valves and a second evaporator are connected in this order via a refrigerant duct to allow the refrigerant to flow therethrough in the order, the method comprising: adjusting openings of the plurality of upstream-side expansion valves and openings of the plurality of downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant paths between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels.
 8. The plasma processing method according to claim 7, wherein the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in the plurality of refrigerant paths, the flow rate being detected based on a result of detection by each of detectors that are arranged on a plurality of refrigerant ducts between the plurality of upstream-side expansion valves and the respective refrigerant inlets of the plurality of refrigerant channels and detect respective temperatures of the refrigerants flowing in the respective refrigerant ducts.
 9. The plasma processing method according to claim 7, wherein the plurality of refrigerant channels include a center-side refrigerant channel arranged on a center side of the sample stage and an outer periphery-side refrigerant channel arranged on an outer periphery side of the sample stage; and wherein the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that a sum of reciprocals of refrigerant conductances of the upstream-side expansion valve and the downstream-side expansion valve connected to the center-side refrigerant channel is equal to a sum of reciprocals of refrigerant conductances of the upstream-side expansion valve and the downstream-side expansion valve connected to the outer periphery-side refrigerant channel.
 10. The plasma processing apparatus according to claim 7, wherein the plurality of refrigerant channels includes a center-side refrigerant channel arranged on a center side of the sample stage and an outer periphery-side refrigerant channel arranged on an outer periphery side of the sample stage, and the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves include a common configuration; and wherein the openings of the plurality of upstream-side expansion valves and the opening of the plurality of downstream-side expansion valves are adjusted so that a sum of reciprocals of the openings of the upstream-side expansion valve and the downstream-side expansion valve connected to the center-side refrigerant channel is equal to a sum of reciprocals of the openings of the upstream-side expansion valve and the downstream-side expansion valve connected to the outer periphery-side refrigerant channel.
 11. The plasma processing method according to claim 10, wherein the openings of the plurality of upstream-side expansion valves and the openings of the plurality of downstream-side expansion valves are adjusted so that a sum of the opening of the downstream-side expansion valve connected to the center-side refrigerant channel and the opening of the upstream-side expansion valve connected to the outer periphery-side refrigerant channel is equal to a sum of the opening of the upstream-side expansion valve connected to the center-side refrigerant channel and the opening of the downstream-side expansion valve connected to the outer periphery-side refrigerant channel. 